High voltage implantation allows producing different types of photodiodes. They can be combined with integrated circuits, such as transimpedance amplifiers, on the same chip, or the high-resolution lithography can be used to produce arrays of passive photodiodes.
low dark current allows use in a wide temperature range
PN junctions in different depths allow different spectral sensitivities
all photodiode types available without any extra layers within the bipolar or BiCMOS process
antireflective coating available as process option
DIFFERENTIAL CENTRE DETECTOR
also suitable as absolute encoder
with integrated differential amplifiers
for various applications
Custom-specific-opto-ICs are developed on request. For more information click here.