High voltage implantation allows producing different types of photodiodes. They can be combined with integrated circuits, such as transimpedance amplifiers, on the same chip, or the high-resolution lithography can be used to produce arrays of passive photodiodes.

Key features

• low dark current allows use in a wide temperature range

• PN junctions in different depths allow different spectral sensitivities

• all photodiode types available without any extra layers within the bipolar or BiCMOS process

• antireflective coating available as process option

Opto-ASICs

DIFFERENTIAL CENTRE DETECTOR
also suitable as absolute encoder

4-QUADRANT PHOTODIODE
with integrated differential amplifiers

INCREMENTAL ENCODERS
for various applications

Custom-specific-opto-ICs are developed on request. For more information click here.